Heat Spreader for Power Semiconductor Devices
Power semiconductor devices are frequently limited by high-temperature operation due to large current conduction that causes the device to invariably heat up. Such devices need to be cooled by continuously conducting and removing heat from the device to the external environment. Graphene and Graphene Derivatives-on-Silicon technology for power semiconductor devices has been developed by MIMOS with an aim to achieve higher device efficiency in high operating temperatures. Both MOS compatible and Ultrasonic Spraycoating approaches have been employed to deposit very thin film of heatspreading material on silicon and other substrates.
Graphene is known as a material which has high thermal conductivity. It can be used as a heat dissipation material for efficiently cooling down semiconductor devices in modern electronic appliances. One of the examples is graphene heat spreader that cools down power Schottky diode by reducing the localized self heating effect at the metal-semiconductor interface. The heat spreader connect with heat sink through thermal interface material outside of the active region. Heat produced by the diode can be removed and effectively transferred to the surrounding air as quickly as possible.
- Power electronics
- High power LEDs
- Solar panel converters
- Electronic system in automotive
- Electronic component in power supply
- Very thin heatspreader film with good temperature stability
- Highly uniform material deposition over large substrate
- Wide ranging substrates and heatspreader materials
- Fast and efficient process
- Semiconductor process compatibility